Reasonable and consistent hFE gain makes it universally suitable and applicable for most purposes.Sturdy TO-3 case encapsulation makes it easily mountable over heatsinks with snug face to face contact, enabling perfect heat dissipation from the device and ensuring optimum response.Robust output current delivering capability makes it ideally suited for applications in power amplifiers and power inverters.Low base to emitter voltage, makes it easily switchable even with nominal output potentials available from linear ICs without incorporating buffer stages.

High collector to emitter voltage handling capability makes it highly versatile for most power amplification applications.Rugged design and packaging, makes it less vulnerable to mechanical stresses during procurement and transportation.Electronic Components Datasheet Search English Chinese. 2N3055 datasheet, 2N3055 datasheets, 2N3055 pdf, 2N3055 circuit: MOSPEC - POWER TRANSISTORS(15A,50V,115W),alldatasheet, datasheet, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs, and other semiconductors. Features, Applications: Power dissipation 25вЊ DC current gain hFE 4 A VCE( Sat) 1.1 V (Maximum) 400 mA Designed for use general-purpose amplifier and low - frequency switching applications. 2N3055 datasheet, 2N3055 pdf, 2N3055 data sheet, datasheet, data sheet, pdf, Boca Semiconductor Corporation, COMPLEMENTARY SILICON POWER TRANSISTORS.

Collectorв€’Emitter Saturation Voltage в€’ VCE(sat) = 1.1 Vdc (Max) IC = 4 Adc. DC Current Gain в€’ hFE = 20в€’70 IC = 4 Adc. The device has become particularly popular due to some of its outstanding features, as summarized below:ДўN3055/D 2N3055(NPN), MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors Complementary silicon power transistors are designed for generalв€’purpose switching and amplifier applications. The basic application range include power switching, high fidelity amplification, shunt regulation, and forming the output stages of various power circuits. The 2N3055 is a NPN Epitaxial-Base Planar Transistor that normally comes encapsulated in a metal Jedec TO-3 package.

Mica insulators for 2n3055 transistor